193 tm HCS161MS radiation hardened synchronous counter pinouts 16 lead ceramic dual-in-line metal seal package (sbdip) mil-std-1835 cdip2-t16 top view 16 lead ceramic metal seal flatpack package (flatpack) mil-std-1835 cdfp4-f16 top view 14 15 16 9 13 12 11 10 1 2 3 4 5 7 6 8 cp p0 p1 p2 p3 gnd pe q0 q1 q2 q3 te tc mr vcc spen 2 3 4 5 6 7 8 116 15 14 13 12 11 10 9 cp p0 p1 p2 p3 gnd pe mr q0 q1 q2 q3 te tc vcc spe features ? 3 micron radiation hardened sos cmos ? total dose 200k rad (si) ? sep effective let no upsets: >100 mev-cm 2 /mg ? single event upset (seu) immunity < 2 x 10 -9 errors/bit- day (typ) ? dose rate survivability: >1 x 10 12 rad (si)/s ? dose rate upset >10 10 rad (si)/s 20ns pulse ? cosmic ray upset immunity 2 x 10 -9 error/bit day (typ) ? latch-up free under any conditions ? military temperature range: -55 o c to +125 o c ? significant power reduction compared to lsttl ics ? dc operating voltage range: 4.5v to 5.5v ? input logic levels - vil = 0.3 vcc max - vih = 0.7 vcc min ? input current levels ii 5 a at vol, voh description the intersil HCS161MS is a radiation hardened 4-input binary; synchronous counter featuring asynchronous reset and look- ahead carry logic. the hcs161 has an active-low master reset to zero, mr . a low level at the synchronous parallel enable, spe , disables counting and allows data at the preset inputs (p0 - p3) to load the counter. the data is latched to the outputs on the posi- tive edge of the clock input, cp. the HCS161MS has two count output, ic. the terminal count output indicates a maximum count for one clock pulse and is used to enable the next cascaded stage to count. the HCS161MS utilizes advanced cmos/sos technology to achieve high-speed operation. this device is a member of radiation hardened, high-speed, cmos/sos logic family. the HCS161MS is supplied in a 16 lead ceramic flatpack (k suffix) or a sbdip package (d suffix). september 1995 spec number 518755 fn2469.2 db na ordering information part number temperature range screening level package hcs161dmsr -55 o c to +125 o c intersil class s equivalent 16 lead sbdip hcs161kmsr -55 o c to +125 o c intersil class s equivalent 16 lead ceramic flatpack hcs161d/sample +25 o c sample 16 lead sbdip hcs161k/sample +25 o c sample 16 lead ceramic flatpack hcs161hmsr +25 o cdie die
194 HCS161MS functional diagram truth table operating mode inputs outputs mr cp pe te spe pn qn tc reset (clear) lxxxxxl l parallel load h x x i i l l hxxihh(a) count h h h h (c) x count (a) inhibit h x i (b) x h (c) x qn (a) h x x i (b) h (c) x qn l h = high level, l = low level, x = immaterial, = transition from low to high ff1 spe t c l r q d ff2 spe t c l r q d ff3 spe t c l r q d 10 te ff0 spe t c l r q d 15 tc 16 v cc 8 gnd 9 spe cp 2 1 mr r 7 pe 6 p3 5 p2 4 p1 3 p0 14 q0 q1 13 q2 12 q3 11 spec number 518755
195 specifications HCS161MS absolute maximum ratings reliability information supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5v to +7.0v input voltage range, all inputs . . . . . . . . . . . . .-0.5v to vcc +0.5v dc input current, any one input . . . . . . . . . . . . . . . . . . . . . . . . 10ma dc drain current, any one output . . . . . . . . . . . . . . . . . . . . . . . 25ma (all voltage reference to the vss terminal) storage temperature range (tstg). . . . . . . . . . . -65 o c to +150 o c lead temperature (soldering 10sec). . . . . . . . . . . . . . . . . . +265 o c junction temperature (tj) . . . . . . . . . . . . . . . . . . . . . . . . . . +175 o c esd classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . class 1 thermal resistance ja jc sbdip package. . . . . . . . . . . . . . . . . . . . 73 o c/w 24 o c/w ceramic flatpack package . . . . . . . . . . . 114 o c/w 29 o c/w maximum package power dissipation at +125 o c ambient sbdip package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68w ceramic flatpack package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44w if device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: sbdip package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mw/ o c ceramic flatpack package . . . . . . . . . . . . . . . . . . . . . . 8.8mw/ o c caution: as with all semiconductors, stress listed under ?absolute maximum ratings? may be applied to devices (one at a time) w ithout resulting in permanent damage. this is a stress rating only. exposure to absolute maximum rating conditions for extended periods may affect device rel iability. the conditions listed under ?electrical performance characteristics? are the only conditions recommended for satisfactory device operation.. operating conditions supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5v to +5.5v input rise and fall times at 4.5v vcc (tr, tf) . . . . . . . 100ns max operating temperature range (t a ) . . . . . . . . . . . . -55 o c to +125 o c input low voltage (vil). . . . . . . . . . . . . . . . . . . 0.0v to 30% of vcc input high voltage (vih) . . . . . . . . . . . . . . . . . . 70% of vcc to vcc table 1. dc electrical performance characteristics parameter symbol (note 1) conditions group a sub- groups temperature limits units min max quiescent current icc vcc = 5.5v, vin = vcc or gnd 1+25 o c-40 a 2, 3 +125 o c, -55 o c-750 a output current (sink) iol vcc = 4.5v, vih = 4.5v, vout = 0.4v, vil = 0v 1+25 o c4.8-ma 2, 3 +125 o c, -55 o c4.0-ma output current (source) ioh vcc = 4.5v, vih = 4.5v, vout = vcc -0.4v, vil = 0v 1+25 o c-4.8-ma 2, 3 +125 o c, -55 o c-4.0-ma output voltage low vol vcc = 4.5v, vih = 3.15v, iol = 50 a, vil = 1.35v 1, 2, 3 +25 o c, +125 o c, -55 o c- 0.1 v vcc = 5.5v, vih = 3.85v, iol = 50 a, vil = 1.65v 1, 2, 3 +25 o c, +125 o c, -55 o c- 0.1 v output voltage high voh vcc = 4.5v, vih = 3.15v, ioh = -50 a, vil = 1.35v 1, 2, 3 +25 o c, +125 o c, -55 o cvcc -0.1 -v vcc = 5.5v, vih = 3.85v, ioh = -50 a, vil = 1.65v 1, 2, 3 +25 o c, +125 o c, -55 o cvcc -0.1 -v input leakage current iin vcc = 5.5v, vin = vcc or gnd 1+25 o c- 0.5 a 2, 3 +125 o c, -55 o c- 5.0 a noise immunity functional test fn vcc = 4.5v, vih = 0.70(vcc), vil = 0.30(vcc) 7, 8a, 8b +25 o c, +125 o c, -55 o c--- notes: 1. all voltages reference to device gnd. 2. for functional tests, vo 4.0v is recognized as a logic ?1?, and vo 0.5v is recognized as a logic ?0?. spec number 518755
196 specifications HCS161MS table 2. ac electrical performance characteristics parameter symbol (notes 1, 2) conditions group a sub- groups temperature limits units min max cp to qn tphl tplh vcc = 4.5v 9 +25 o c 2 34 ns 10, 11 +125 o c, -55 o c 2 39 ns cp to tc tphl tplh vcc = 4.5v 9 +25 o c 2 37 ns 10, 11 +125 o c, -55 o c 2 42 ns te to tc tphl tplh vcc = 4.5v 9 +25 o c 2 23 ns 10, 11 +125 o c, -55 o c 2 26 ns mr to qn tphl vcc = 4.5v 9 +25 o c 2 41 ns 10, 11 +125 o c, -55 o c 2 45 ns mr to tc tphl vcc = 4.5v 9 +25 o c 2 46 ns 10, 11 +125 o c, -55 o c 2 51 ns notes: 1. all voltages referenced to device gnd. 2. ac measurements assume rl = 500 ? , cl = 50pf, input tr = tf = 3ns, vil = gnd, vih = vcc. table 3. electrical performance characteristics parameter symbol conditions notes temperature limits units min max capacitance power dissipation cpd vcc = 5.0v, f = 1mhz 1 +25 o c - 54 pf 1+125 o c, -55 o c - 84 pf input capacitance cin vcc = 5.0v, f = 1mhz 1 +25 o c - 10 pf 1+125 o c - 10 pf output transition time tthl ttlh vcc = 4.5v 1 +25 o c - 15 ns 1+125 o c - 22 ns note: 1. the parameters listed in table 3 are controlled via design or process parameters. min and max limits are guaranteed but not d irectly tested. these parameters are characterized upon initial design release and upon design changes which affect these characteristi cs. table 4. dc post radiation electrical performance characteristics parameter symbol (notes 1, 2) conditions temperature 200k rad limits units min max quiescent current icc vcc = 5.5v, vin = vcc or gnd +25 o c - 0.75 ma output current (sink) iol vcc = 4.5v, vin = vcc or gnd, vout = 0.4v +25 o c4.0-ma output current (source) ioh vcc = 4.5v, vin = vcc or gnd, vout = vcc -0.4v +25 o c-4.0-ma spec number 518755
197 specifications HCS161MS output voltage low vol vcc = 4.5v and 5.5v, vih = 0.70(vcc), vil = 0.30(vcc), iol = 50 a +25 o c-0.1v output voltage high voh vcc = 4.5v and 5.5v, vih = 0.70(vcc), vil = 0.30(vcc), ioh = -50 a +25 o cvcc -0.1 -v input leakage current iin vcc = 5.5v, vin = vcc or gnd +25 o c- 5 a noise immunity functional test fn vcc = 4.5v, vih = 0.70(vcc), vil = 0.30(vcc), (note 3) +25 o c --- cp to qn tphl vcc = 4.5v +25 o c 2 39 ns tplh vcc = 4.5v +25 o c 2 39 ns cp to tc tphl vcc = 4.5v +25 o c 2 43 ns tplh vcc = 4.5v +25 o c 2 43 ns te to tc tphl vcc = 4.5v +25 o c 2 27 ns tplh vcc = 4.5v +25 o c 2 27 ns mr to qn tphl vcc = 4.5v +25 o c 2 45 ns mr to tc tphl vcc = 4.5v +25 o c 2 51 ns notes: 1. all voltages referenced to device gnd. 2. ac measurements assume rl = 500 ? , cl = 50pf, input tr = tf = 3ns, vil = gnd, vih = 3v. 3. for functional tests, vo 4.0v is recognized as a logic ?1?, and vo 0.5v is recognized as a logic ?0?. table 5. burn-in and operating life test, delta parameters (+25 o c) parameter group b subgroup delta limit icc 5 12 a iol/ioh 5 -15% of 0 hour table 6. applicable subgroups conformance groups method group a subgroups read and record initial test (preburn-in) 100%/5004 1, 7, 9 icc, iol/h interim test i (postburn-in) 100%/5004 1, 7, 9 icc, iol/h interim test ii (postburn-in) 100%/5004 1, 7, 9 icc, iol/h pda 100%/5004 1, 7, 9, deltas interim test iii (postburn-in) 100%/5004 1, 7, 9 icc, iol/h pda 100%/5004 1, 7, 9, deltas final test 100%/5004 2, 3, 8a, 8b, 10, 11 group a (note 1) sample/5005 1, 2, 3, 7, 8a, 8b, 9, 10, 11 group b subgroup b-5 sample/5005 1, 2, 3, 7, 8a, 8b, 9, 10, 11, deltas subgroups 1, 2, 3, 9, 10, 11 subgroup b-6 sample/5005 1, 7, 9 group d sample/5005 1, 7, 9 note: 1. alternate group a testing in accordance with method 5005 of mil-std-883 may be exercised. table 4. dc post radiation electrical performance characteristics (continued) parameter symbol (notes 1, 2) conditions temperature 200k rad limits units min max spec number 518755
198 specifications HCS161MS table 7. total dose irradiation conformance groups method test read and record pre rad post rad pre rad post rad group e subgroup 2 5005 1, 7, 9 table 4 1, 9 table 4 (note 1) note: 1. except fn test which will be performed 100% go/no-go. table 8. static and dynamic burn-in test connections open ground 1/2 vcc = 3v 0.5v vcc = 6v 0.5v oscillator 50khz 25khz static burn-in i test conditions (note 1) 11 - 15 1 - 10 - 16 - - static burn-in ii test connections (note 1) 11 - 15 8 - 1 - 7, 9, 10, 16 - - dynamic burn-in i test connections (note 2) - 4, 6, 8 11 - 15 1, 3, 5, 7, 9, 10, 16 2 - notes: 1. each pin except vcc and gnd will have a resistor of 10k ? 5% for static burn-in. 2. each pin except vcc and gnd will have a resistor of 1k ? 5% for dynamic burn-in. table 9. irradiation test connections open ground vcc = 5v 0.5v 11 - 15 8 1 - 7, 9, 10, 16 note: each pin except vcc and gnd will have a resistor of 47k ? 5% for irradiation testing. group e, subgroup 2, sample size is 4 dice/wafer 0 failures. spec number 518755
199 HCS161MS intersil space level product flow - ?ms? wafer lot acceptance (all lots) method 5007 (includes sem) gamma radiation verification (each wafer) method 1019, 4 samples/wafer, 0 rejects 100% nondestructive bond pull, method 2023 sample - wire bond pull monitor, method 2011 sample - die shear monitor, method 2019 or 2027 100% internal visual inspection, method 2010, condition a 100% temperature cycle, method 1010, condition c, 10 cycles 100% constant acceleration, method 2001, condition per method 5004 100% pind, method 2020, condition a 100% external visual 100% serialization 100% initial electrical test (t0) 100% static burn-in 1, condition a or b, 24 hrs. min., +125 o c min., method 1015 100% interim electrical test 1 (t1) 100% delta calculation (t0-t1) 100% static burn-in 2, condition a or b, 24 hrs. min., +125 o c min., method 1015 100% interim electrical test 2 (t2) 100% delta calculation (t0-t2) 100% pda 1, method 5004 (notes 1and 2) 100% dynamic burn-in, condition d, 240 hrs., +125 o c or equivalent, method 1015 100% interim electrical test 3 (t3) 100% delta calculation (t0-t3) 100% pda 2, method 5004 (note 2) 100% final electrical test 100% fine/gross leak, method 1014 100% radiographic, method 2012 (note 3) 100% external visual, method 2009 sample - group a, method 5005 (note 4) 100% data package generation (note 5) notes: 1. failures from interim electrical test 1 and 2 are combined for determining pda 1. 2. failures from subgroup 1, 7, 9 and deltas are used for calculating pda. the maximum allowable pda = 5% with no more than 3% o f the failures from subgroup 7. 3. radiographic (x-ray) inspection may be performed at any point after serialization as allowed by method 5004. 4. alternate group a testing may be performed as allowed by mil-std-883, method 5005. 5. data package contents: ? cover sheet (intersil name and/or logo, p.o. number, customer part number, lot date code, intersil part number, lot number, quantity). ? wafer lot acceptance report (method 5007). includes reproductions of sem photos with percent of step coverage. ? gamma radiation report. contains cover page, disposition, rad dose, lot number, test package used, specification numbers, test equipment, etc. radiation read and record data on file at intersil. ? x-ray report and film. includes penetrometer measurements. ? screening, electrical, and group a attributes (screening attributes begin after package seal). ? lot serial number sheet (good units serial number and lot number). ? variables data (all delta operations). data is identified by serial number. data header includes lot number and date of test. ? the certificate of conformance is a part of the shipping invoice and is not part of the data book. the certificate of conforma nce is signed by an authorized quality representative. spec number 518755
200 all intersil u.s. products are manufactured, assembled and tested utilizing iso9000 quality systems. intersil corporation?s quality certifications can be viewed at www.intersil.com/design/quality intersil products are sold by description only. intersil corporation reserves the right to make changes in circuit design, soft ware and/or specifications at any time without notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnishe d by intersil is believed to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of paten ts or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see www.intersil.com sales office headquarters north america intersil corporation 7585 irvine center drive suite 100 irvine, ca 92618 tel: (949) 341-7000 fax: (949) 341-7123 intersil corporation 2401 palm bay rd. palm bay, fl 32905 tel: (321) 724-7000 fax: (321) 724-7946 europe intersil europe sarl ave. william graisse, 3 1006 lausanne switzerland tel: +41 21 6140560 fax: +41 21 6140579 asia intersil corporation unit 1804 18/f guangdong water building 83 austin road tst, kowloon hong kong tel: +852 2723 6339 fax: +852 2730 1433 HCS161MS ac timing diagrams ac load circuit ac voltage levels parameter hcs units vcc 4.50 v vih 4.50 v vs 2.25 v vil 0 v gnd 0 v vs input output output tthl 80% 20% 80% 20% vih vil voh vol voh vol tplh tphl vs ttlh dut test cl rl point cl = 50pf rl = 500 ? spec number 518755
201 HCS161MS die characteristics die dimensions: 104 x 86 mils 2650 x 2190mm metallization: type: alsi metal thickness: 11k ? 1k ? glassivation: type: sio 2 thickness: 13k ? 2.6k ? worst case current density: <2.0 x 10 5 a/cm 2 bond pad size: 100 m x 100 m 4 x 4 mils metallization mask layout HCS161MS note: the die diagram is a generic plot from a similar hcs device. it is intended to indicate approximate die size and bond pad location. the mask series for the hcs161 is ta14346a. cp mr vcc p0 (3) p1 (4) p2 (5) p3 (6) (9) (10) (11) q3 (12) q2 (13) q1 (2) (1) (16) spe te (8) gnd (14) q0 pe (7) (15) tc spec number 518755
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